- 您现在的位置：买卖IC网 > Sheet目录445 > IRFI520N (International Rectifier)MOSFET N-CH 100V 7.6A TO220FP
IRFI520N
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
V (BR)DSS
? V (BR)DSS / ? T J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
100
–––
–––
0.11
––– V V GS = 0V, I D = 250μA
––– V/°C Reference to 25°C, I D = 1mA ?
R DS(on)
Static Drain-to-Source On-Resistance
–––
–––
0.20
?
V GS = 10V, I D = 4.3A ?
––– R G = 22 ?
V GS(th)
g fs
I DSS
I GSS
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
2.0
2.7
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
4.5
23
32
23
4.0 V V DS = V GS , I D = 250μA
––– S V DS = 25V, I D = 5.7A ?
25 V DS = 100V, V GS = 0V
μA
250 V DS = 80V, V GS = 0V, T J = 150°C
100 V GS = 20V
nA
-100 V GS = -20V
25 I D = 5.7A
4.4 nC V DS = 80V
11 V GS = 10V, See Fig. 6 and 13 ??
––– V DD = 50V
––– I D = 5.7A
ns
––– R D = 8.6 ?, See Fig. 10 ??
L D
L S
Internal Drain Inductance
Internal Source Inductance
–––
––––––
4.5
7.5
–––
– – – – – –
nH
Between lead,
6mm (0.25in.)
from package
and center of die contact
G
D
S
92 ––– V DS = 25V
C iss
C oss
C rss
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
–––
–––
–––
–––
330 ––– V GS = 0V
pF
54 ––– ? = 1.0MHz, See Fig. 5 ?
12 ––– ? = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
I SM
V SD
t rr
Q rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ??
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
–––
–––
–––
–––
–––
–––
–––
–––
99
390
7.6
38
1.3
150
580
A
V
ns
nC
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T J = 25°C, I S = 4.3A, V GS = 0V ?
T J = 25°C, I F = 5.7A
di/dt = 100A/μs ??
G
D
S
Notes:
? Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
? V DD = 25V, starting T J = 25°C, L = 4.7mH
R G = 25 ? , I AS = 5.7A. (See Figure 12)
? I SD ≤ 5.7A, di/dt ≤ 240A/μs, V DD ≤ V (BR)DSS ,
T J ≤ 175°C
? Pulse width ≤ 300μs; duty cycle ≤ 2%.
? t=60s, ?=60Hz
? Uses IRF520N data and test conditions
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
IRFI530N
MOSFET N-CH 100V 12A TO220FP
IRFIZ24E
MOSFET N-CH 60V 14A TO220FP
IRFIZ34E
MOSFET N-CH 60V 21A TO220FP
IRFIZ46NPBF
MOSFET N-CH 55V 33A TO220FP
IRFIZ46N
MOSFET N-CH 55V 33A TO220FP
IRFIZ48NPBF
MOSFET N-CH 55V 40A TO220FP
IRFIZ48N
MOSFET N-CH 55V 36A TO220FP
IRFL024NTR
MOSFET N-CH 55V 2.8A SOT223
相关代理商/技术参数
IRFI520NHR
制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 7.6A 3-Pin(3+Tab) TO-220FP
IRFI520NPBF
功能描述:MOSFET N-CH 100V 7.6A TO220FP RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
IRFI520NPBF
制造商:International Rectifier 功能描述:MOSFET Transistor RoHS Compliant:Yes
IRFI5210
制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET Power MOSFET
IRFI530
制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9.7A I(D) | TO-220AB
IRFI530A
制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Advanced Power MOSFET
IRFI530ATU
功能描述:MOSFET
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFI530G
功能描述:MOSFET N-Chan 100V 9.7 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube